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| (R) STPS80L15TV LOW DROP OR-ing POWER SCHOTTKY DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 40 A 15 V 125 C 0.33 V K1 A1 K2 A2 FEATURES AND BENEFITS VERY LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION AND REDUCED HEATSINK INSULATED PACKAGE: Insulated voltage = 2500 V(RMS) Capacitance = 45 pF DESCRIPTION Dual Schottky rectifier suited for Switched Mode Power Supplies and DC to DC power converters. Packaged in ISOTOPTM, this device is especially intended for use as an OR-ing diode in fault tolerant power supply equipments. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage Tc = 110C =1 tp = 10 ms Sinusoidal tp = 2 s F = 1kHz Parameter Repetitive peak reverse voltage K2 A2 K1 A1 ISOTOPTM Value 15 100 40 700 2 - 65 to + 150 125 10000 Unit V A A A A C C V/s dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj ISOTOP is a trademark of STMicroelectronics July 1999 - Ed: 4A 1/4 STPS80L15TV THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 1 0.55 0.1 Unit C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 100C Tj = 25C Tj = 100C VF * Forward voltage drop Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2 % Min. Typ. 280 Max. 11 Unit mA VR = 5V VR = 12V 0.44 IF = 40 A IF = 40 A 0.28 1.1 0.43 0.33 A V To evaluate the conduction losses use the following equation : P = 0.19 x IF(AV) + 3.25 10-3 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (=1, per diode). PF(av)(W) 14 12 10 8 6 4 2 IF(av) (A) 0 0 5 10 15 20 25 30 =tp/T T = 0.05 = 0.1 = 0.2 = 0.5 =1 tp 35 40 45 45 40 35 30 25 20 15 10 5 0 IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=5C/W T =tp/T tp Tamb(C) 50 75 100 125 0 25 2/4 STPS80L15TV Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 4: Relative variation of thermal impedance junction to case versus pulse(per diode). IM(A) 500 450 400 350 300 250 200 150 100 IM 50 0 1E-3 1.0 0.8 0.6 Tc=50C Zth(j-c)/Rth(j-c) = 0.5 0.4 = 0.2 Tc=75C t 0.2 t(s) 1E-2 1E-1 Tc=110C =0.5 = 0.1 Single pulse tp(s) 1E-2 1E-1 1E+0 1E+0 0.0 1E-4 1E-3 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) F=1MHz Tj=25C 10 Tj=100C 1E+3 1E+2 1E+1 Tj=25C Tj=75C 5 1E+0 VR(V) 2 VR(V) 1E-1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 1 1 2 5 10 20 Fig. 7: Forward voltage drop versus forward current (per diode). IFM(A) 200.0 100.0 Tj=100C (typical values) Tj=100C (Maximum values) 10.0 Tj=25C (Maximum values) 1.0 VFM(V) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 3/4 STPS80L15TV PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Ordering type Marking Package ISOTOP Weight 28g (without screws) Base qty 10 Delivery mode Tube STPS80L15TV STPS80L15TV Cooling method: by conduction (C) Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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